isotropic band

Adopted the pressure coefficients of some physical parameter of the semiconductor materials , we calculated the donor and exciton binding energy used a variational method under isotropic effective band mass approximation .

运用已有文献关于一些物理量压力系数的结果，在各向同性有效质量近似下，采用变分法计算了压力影响下杂质态和激子的结合能。